DLA10IM800UC single diode high efficiency standard rectifier 2/4 1 3 part number DLA10IM800UC marking on product: marlui backside: cathode fav f vv 1.16 rrm 10 800 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-252 (dpak) industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130121b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DLA10IM800UC v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.22 r 2k/w r min. 10 v rsm v 5 t = 25c vj t = c vj ma 0.05 v = v r t = 25c vj i = a f v t = c c 145 p tot 75 w t = 25c c r k/w 10 800 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.40 t = 25c vj 150 v f0 v 0.84 t = c vj 175 r f 30 m ? v 1.16 t = c vj i = a f v 10 1.45 i = a f 20 i = a f 20 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 800 max. repetitive reverse blocking voltage t = 25c vj c j 3 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 120 130 50 50 a a a a 100 110 72 70 800 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 900 0.50 ixys reserves the right to change limits, conditions and dimensions. 20130121b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DLA10IM800UC 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). in case of (1) and a pr oduct with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. ratings z y y ww logo marking on product assembly line abcdefg p r odu c tm a r ki n g ixys date code d l a 10 im 800 uc part number diode high efficiency standard rectifier (up to 1200v) single diode to-252aa (dpak) = = = current rating [a] reverse voltage [v] = = = = package t vj c t stg c 150 storage temperature -55 weight g 0.3 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 i rms rms current 20 a per terminal 175 -55 to-252 ( dpak ) delivery mode quantity code no. part number marking on product ordering 1 ) DLA10IM800UC 503668 tape & reel 2500 marlui standard threshold voltage v 0.84 m ? v 0 max r 0 max slope resistance * 27 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130121b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DLA10IM800UC 2/4 1 3 outlines to-252 (dpak) ixys reserves the right to change limits, conditions and dimensions. 20130121b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DLA10IM800UC 0.001 0.01 0.1 1 40 60 80 100 234567890 1 1 10 1 10 2 0.5 1.0 1.5 0 4 8 12 16 20 024681012 0 2 4 6 8 10 12 14 16 1 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 0 5 10 15 20 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m t ] a [ amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop fig. 2 surge overload current fig. 3 i 2 tversustime fig. 4 power dissipation versus direct output current and ambient temperature fig. 5 max. forward current vs. case temperature fi g . 6 transient thermal im p edance j unction to case t[ms] constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.1 0.005 2 0.06 0.0003 3 0.14 0.045 40.2 0.2 50.5 0.05 0 25 50 75 100 125 150 175 200 t vj =150c t vj =125c t vj =25c dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj =45c 50 hz, 80% v rrm t vj = 45c v r = 0 v t vj = 150c t vj =150c r thha = 1.0 k/w 2.0 k/w 4.0 k/w 8.0 k/w 10.0 k/w 12.0 k/w rectifier ixys reserves the right to change limits, conditions and dimensions. 20130121b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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